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| (R) STPS80H100TV HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) FEATURES AND BENEFITS NEGLIGIBLESWITCHING LOSSES HIGH JUNCTION TEMPERATURE CAPABILITY LOW LEAKAGE CURRENT GOODTRADE OFF BETWEEN LEAKAGECURRENT AND FORWARD VOLTAGE DROP AVALANCHE RATED LOW INDUCTANCE PACKAGE INSULATED PACKAGE : Insulated voltage = 2500 V (RMS) Capacitance = 45 pF DESCRIPTION High voltage dual Schottky barrier rectifier designed for high frequency telecom and computer Switched Mode Power Supplies and other power converters. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM Tstg Tj dV/dt RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Tc = 120C = 0.5 Per diode Per device Parameter Repetitive peak reverse voltage Value 100 125 40 80 700 2 5 - 55 to+ 150 150 10000 Unit V A A A A A C C V/s 2 x 40 A 100 V 150 C 0.65 V K1 A1 K2 A2 ISOTOPTM Packaged in ISOTOP, this device is intended for use in medium voltage operation, and particularly, in high frequen cy circuitries where low switching losses and low noise are required. tp = 10 ms sinusoidal tp = 2 s square F = 1kHz tp = 100 s square Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage *: dPtot 1 < thermal runaway condition for a diode on its own heatsink dTj Rth(j-a) July 1999 - Ed: 3A 1/4 STPS80H100TV THERMAL RESISTANCES Symbol Rth (j-c) Rth (c) When the diodes 1 and 2 are used simultaneously: Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * VF ** Parameter Reverse leakage current Forward voltage drop Tests Conditions Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Pulse test : * tp = 5 ms, < 2% ** tp = 380 s, < 2% Parameter Junction to case Per leg Total Coupling Value 1 0.55 0.1 Unit C/W Min. Typ. 7 Max. 20 25 0.78 0.65 0.89 0.74 Unit A mA V VR = VRRM IF = 40 A IF = 40 A IF = 80 A IF = 80 A 0.7 0.61 To evaluate the maximum conduction losses use the following equation : P = 0.56 x IF(AV) + 0.0022 x IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current (per diode). PF(av)(W) 35 30 25 =1 = 0.05 = 0.1 = 0.2 = 0.5 Fig. 2: Average forward current versus ambient temperature (=0.5, per diode). IF(av)(A) 50 45 40 35 30 25 20 15 10 5 0 Rth(j-a)=Rth(j-c) 20 15 10 5 0 0 5 10 15 20 IF(av) (A) 25 30 35 =tp/T T Rth(j-a)=5C/W T tp =tp/T tp Tamb(C) 50 75 100 125 150 40 45 50 0 25 2/4 STPS80H100TV Fig. 3: Non repetitive surge peak forward current versusoverloadduration(maximum values, perdiode). IM(A) 500 400 300 Tc=50C Fig. 4: Relative variation of thermal impedance junction to case versus pulse duration (per diode). Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4 = 0.5 200 Tc=75C = 0.2 = 0.1 T 100 IM Tc=110C t 0.2 Single pulse 0 1E-3 =0.5 t(s) 1E-2 1E-1 1E+0 0.0 1E-3 tp(s) 1E-2 1E-1 =tp/T tp 1E+0 5E+0 Fig. 5: Reverse leakage current versus reverse voltage applied (typical values, per diode). IR(A) 1E+4 Tj=125C Fig. 6: Junction capacitance versus reverse voltage applied (typical values, per diode). C(nF) 5.0 F=1MHz Tj=25C 1E+3 1E+2 1E+1 1E+0 1E-1 0 10 20 Tj=25C 1.0 VR(V) 30 40 50 60 70 80 90 100 0.1 1 2 5 VR(V) 10 20 50 100 Fig. 7: Forward voltage drop versus forward current (maximum values, per diode). IFM(A) 500 100 Tj=125C Tj=25C 10 VFM(V) 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 3/4 STPS80H100TV PACKAGE MECHANICAL DATA ISOTOPTM DIMENSIONS REF. A A1 B C C2 D D1 E E1 E2 G G1 G2 F F1 P P1 S Cooling method: C Recommended torque value: 1.3 N.m. Maximum torque value: 1.5 N.m. Millimeters Min. Max. 11.80 12.20 8.90 9.10 7.8 8.20 0.75 0.85 1.95 2.05 37.80 38.20 31.50 31.70 25.15 25.50 23.85 24.15 24.80 typ. 14.90 15.10 12.60 12.80 3.50 4.30 4.10 4.30 4.60 5.00 4.00 4.30 4.00 4.40 30.10 30.30 Inches Min. Max. 0.465 0.480 0.350 0.358 0.307 0.323 0.030 0.033 0.077 0.081 1.488 1.504 1.240 1.248 0.990 1.004 0.939 0.951 0.976 typ. 0.587 0.594 0.496 0.504 0.138 0.169 0.161 0.169 0.181 0.197 0.157 0.69 0.157 0.173 1.185 1.193 Ordering type Marking Package ISOTOP Weight 27g without screws Base qty 10 Delivery mode Tube STPS80H100TV STPS80H100TV Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4 |
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